digitron semiconductors 144 market street kenilworth nj 07033 usa phone +1.908.245-7200 t2801 series bidirectional triode thyristors available non-rohs (standard) or rohs compliant (add pbf suffix). available as ?hr? (high reliability) screened per mil-prf- 19500, jantx level. add ?hr? suffix to base part number. maximum ratings rating symbol value unit repetitive peak off-stage voltage (1) (t j = -40 to +100c, gate open) t2801b t2801c T2801D t2801e t2801m v drm 200 300 400 500 600 volts rms on-state current (conduction angle = 360, t c = 80c) i t(rms) 6 amps peak non-repetitive surge current (one cycle, 60hz) i tsm 80 amps circuit fusing considerations (t j = -40 to +100c, t = 1 to 8.3ms) i 2 t 35 a 2 s peak gate power (pulse width = 2.0s, t c = 80c) p gm 16 watts average gate power ( t c = 80c, t = 8.3ms) p g(av) 0.35 watts peak trigger current (pulse width = 1.0s) i gm 4 amps operating junction temperature range t j -40 to +100 c storage temperature range t stg -40 to +150 c note 1: ratings apply for open gate conditions. thyristor device s shall not be tested with a co nstant current source for blocki ng capability such that the voltage applied exceeds the rated blocking voltage. thermal characteristics characteristics symbol max unit thermal resistance, junction to case r ? jc 2.2 c/w electrical characteristics (t c = 25c, either polarity of mt2 to mt1 voltage unless otherwise noted) characteristic symbol min typ max unit peak off state current (rated v drm @ t j = 100c) i drm - - 2 ma peak on-state voltage (i tm = 30a peak, pulse width = 1 to 2ms, duty cycle 2%) v tm - 2 3 volts dc gate trigger current (continuous dc) (2) (v d = 12v, r l = 12 ? ) i gt - 25 80 ma dc gate trigger voltage (continuous dc) (2) (v d = 12v, r l = 12 ? ) (v d = v drm , r l = 125? , t c = 100c) v gt - 0.2 1.5 - 4 - volts holding current (either direction) (v d = 12v, gate open, i t = 150ma) i h - 100 - ma gate controlled turn on time (2) (v d = rated v drm , i t = 10a, i gt = 80ma, rise time = 0.1s) t gt - 2.2 - s critical rate of rise of commutating voltage (rated v drm , i t(rms) = 6a, commutating di/dt = 4.3a/ms, gate unenergized, t c = 80c) dv/dt(c) - 10 - v/s critical rate of rise of off-state voltage (rated v drm , exponential voltage rise, gate open, t c = 100c) t2801b t2801c T2801D t2801e dv/dt 50 40 30 20 - - - - - - - - v/s note 2: applies for mt2(+), g(+); mt2(-), g (-) sales@digitroncorp.com fax +1.908.245-0555 www.digitroncorp.com rev. 20130206
digitron semiconductors 144 market street kenilworth nj 07033 usa phone +1.908.245-7200 t2801 series bidirectional triode thyristors mechanical characteristics case to-220ab marking alpha-numeric pin out see below sales@digitroncorp.com to-220ab inches millimeters min max min max a 0.575 0.620 14.600 15.750 b 0.380 0.405 9.650 10.290 c 0.160 0.190 4.060 4.820 d 0.025 0.035 0.640 0.890 f 0.142 0.147 3.610 3.730 g 0.095 0.105 2.410 2.670 h 0.110 0.155 2.790 3.930 j 0.014 0.022 0.360 0.560 k 0.500 0.562 12.700 14.270 l 0.045 0.055 1.140 1.390 n 0.190 0.210 4.830 5.330 q 0.100 0.120 2.540 3.040 r 0.080 0.110 2.040 2.790 s 0.045 0.055 1.140 1.390 t 0.235 0.255 5.970 6.480 u - 0.050 - 1.270 v 0.045 - 1.140 - z - 0.080 - 2.030 fax +1.908.245-0555 www.digitroncorp.com rev. 20130206
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